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1/15 april 2000 M27W101 1 mbit (128kb x8) low voltage uv eprom and otp eprom n 2.7v to 3.6v low voltage in read operation n access time: C70ns at v cc = 3.0v to 3.6v C80ns at v cc = 2.7v to 3.6v n pin compatible with m27c1001 n low power consumption: C active current 15ma at 5mhz C standby current 15a n programming time 100s/byte n high reliability cmos technology C 2,000v esd protection C 200ma latchup protection immunity n electronic signature C manufacturer code: 20h C device code: 05h description the M27W101 is a low voltage 1 mbit eprom of- fered in two range uv (ultra violet erase) and otp (one time programmable). it is ideally suited for mi- croprocessor systems requiring large data or pro- gram storage and is organized as 131,072 by 8 bits. the M27W101 operates in the read mode with a supply voltage as low as 2.7v at C40 to 85 c tem- perature range. the decrease in operating power allows either a reduction of the size of the battery or an increase in the time between battery recharges. the fdip32w (window ceramic frit-seal package) has a transparent lid which allows the user to ex- pose the chip to ultraviolet light to erase the bit pat- tern. a new pattern can then be written to the device by following the programming procedure. for application where the content is programmed only one time and erasure is not required, the M27W101 is offered in pdip32, plcc32 and tsop32 (8 x 20 mm) packages. figure 1. logic diagram ai01587 17 a0-a16 p q0-q7 v pp v cc M27W101 g e v ss 8 1 32 32 1 fdip32w (f) pdip32 (b) plcc32 (k) tsop32 (n) 8 x 20 mm
M27W101 2/15 figure 2b. lcc connections ai01588 nc a8 a10 q5 17 a1 a0 q0 q1 q2 q3 q4 a7 a4 a3 a2 a6 a5 9 p a9 1 a16 a11 a13 a12 q7 32 v pp v cc M27W101 a15 a14 q6 g e 25 v ss figure 2a. dip connections a1 a0 q0 a7 a4 a3 a2 a6 a5 a13 a10 a8 a9 q7 a14 a11 g e q5 q1 q2 q3 v ss q4 q6 nc p a16 a12 v pp v cc a15 ai02674 M27W101 8 1 2 3 4 5 6 7 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 table 1. signal names a0-a16 address inputs q0-q7 data outputs e chip enable g output enable p program v pp program supply v cc supply voltage v ss ground nc not connected internally figure 2c. tsop connections a1 a0 q0 a7 a4 a3 a2 a6 a5 a13 a10 a8 a9 q7 a14 a11 g e q5 q1 q2 q3 q4 q6 nc p a16 a12 v pp v cc a15 ai01589 M27W101 (normal) 8 1 9 16 17 24 25 32 v ss
3/15 M27W101 table 2. absolute maximum ratings (1) note: 1. except for the rating "operating temperature range", stresses above those listed in the table "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only and operation of the device at these or any other condition s above those indicated in the operating sections of this specification is not implied. exposure to absolute maximum rating condi - tions for extended periods may affect device reliability. refer also to the stmicroelectronics sure program and other relevant qual- ity documents. 2. minimum dc voltage on input or output is C0.5v with possible undershoot to C2.0v for a period less than 20ns. maximum dc voltage on output is v cc +0.5v with possible overshoot to v cc +2v for a period less than 20ns. 3. depends on range. table 3. operating modes note: x = v ih or v il , v id = 12v 0.5v. table 4. electronic signature symbol parameter value unit t a ambient operating temperature (3) C40 to 85 c t bias temperature under bias C50 to 125 c t stg storage temperature C65 to 150 c v io (2) input or output voltage (except a9) C2 to 7 v v cc supply voltage C2 to 7 v v a9 (2) a9 voltage C2 to 13.5 v v pp program supply voltage C2 to 14 v mode e g p a9 v pp q7-q0 read v il v il xx v cc or v ss data out output disable v il v ih xx v cc or v ss hi-z program v il v ih v il pulse x v pp data in verify v il v il v ih x v pp data out program inhibit v ih x xx v pp hi-z standby v ih xxx v cc or v ss hi-z electronic signature v il v il v ih v id v cc codes identifier a0 q7 q6 q5 q4 q3 q2 q1 q0 hex data manufacturers code v il 00100000 20h device code v ih 00000101 05h
M27W101 4/15 device operation the operating modes of the M27W101 are listed in the operating modes table. a single power supply is required in the read mode. all inputs are ttl levels except for v pp and 12v on a9 for electronic signature. read mode the M27W101 has two control functions, both of which must be logically active in order to obtain data at the outputs. chip enable (e ) is the power control and should be used for device selection. output enable (g ) is the output control and should be used to gate data to the output pins, indepen- dent of device selection. assuming that the ad- dresses are stable, the address access time (t avqv ) is equal to the delay from e to output (t elqv ). data is available at the output after a delay of t glqv from the falling edge of g , assuming that e has been low and the addresses have been sta- ble for at least t avqv -t glqv . standby mode the M27W101 has a standby mode which reduc- es the supply current from 15ma to 15a with low voltage operation v cc 3.6v, see read mode dc characteristics table for details. the M27W101 is placed in the standby mode by applying a cmos high signal to the e input. when in the standby mode, the outputs are in a high impedance state, independent of the g input. table 5. ac measurement conditions high speed standard input rise and fall times 10ns 20ns input pulse voltages 0 to 3v 0.4v to 2.4v input and output timing ref. voltages 1.5v 0.8v and 2v figure 3. ac testing input output waveform ai01822 3v high speed 0v 1.5v 2.4v standard 0.4v 2.0v 0.8v figure 4. ac testing load circuit ai01823b 1.3v out c l c l = 30pf for high speed c l = 100pf for standard c l includes jig capacitance 3.3k w 1n914 device under test table 6. capacitance (1) (t a = 25 c, f = 1 mhz) note: 1. sampled only, not 100% tested. symbol parameter test condition min max unit c in input capacitance v in = 0v 6pf c out output capacitance v out = 0v 12 pf
5/15 M27W101 table 7. read mode dc characteristics (1) (t a = C40 to 85c; v cc = 2.7v to 3.6v; v pp = v cc ) note: 1. v cc must be applied simultaneously with or before v pp and removed simultaneously or after v pp . 2. maximum dc voltage on output is v cc +0.5v. symbol parameter test condition min max unit i li input leakage current 0v v in v cc 10 a i lo output leakage current 0v v out v cc 10 a i cc supply current e = v il , g = v il , i out = 0ma, f = 5mhz, v cc 3.6v 15 ma i cc1 supply current (standby) ttl e = v ih 1ma i cc2 supply current (standby) cmos e > v cc C 0.2v, v cc 3.6v 15 a i pp program current v pp = v cc 10 a v il input low voltage C0.6 0.2 v cc v v ih (2) input high voltage 0.7 v cc v cc + 0.5 v v ol output low voltage i ol = 2.1ma 0.4 v v oh output high voltage ttl i oh = C400a 2.4 v two line output control because eproms are usually used in larger memory arrays, this product features a 2 line con- trol function which accommodates the use of mul- tiple memory connection. the two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. for the most efficient use of these two control lines, e should be decoded and used as the prima- ry device selecting function, while g should be made a common connection to all devices in the array and connected to the read line from the system control bus. this ensures that all deselect- ed memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device. system considerations the power switching characteristics of advanced cmos eproms require careful decoupling of the devices. the supply current, i cc , has three seg- ments that are of interest to the system designer: the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edges of e . the magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output. the associated transient voltage peaks can be suppressed by complying with the two line output control and by properly selected decoupling capacitors. it is recommended that a 0.1f ceram- ic capacitor be used on every device between v cc and v ss . this should be a high frequency capaci- tor of low inherent inductance and should be placed as close to the device as possible. in addi- tion, a 4.7f bulk electrolytic capacitor should be used between v cc and v ss for every eight devic- es. the bulk capacitor should be located near the power supply connection point. the purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of pcb traces.
M27W101 6/15 figure 5. read mode ac waveforms ai00713b taxqx tehqz a0-a16 e g q0-q7 tavqv tghqz tglqv telqv valid hi-z valid table 8. read mode ac characteristics (1) (t a = C40 to 85c; v cc = 2.7v to 3.6v; v pp = v cc ) note: 1. v cc must be applied simultaneously with or before v pp and removed simultaneously or after v pp . 2. sampled only, not 100% tested. 3. speed obtained with high speed ac measurement conditions. symbol alt parameter test condition M27W101 unit -80 (3) -100 (-120/-150/-200) v cc = 3.0v to 3.6v v cc = 2.7v to 3.6v v cc = 2.7v to 3.6v min max min max min max t av qv t acc address valid to output valid e = v il , g = v il 70 80 100 ns t elqv t ce chip enable low to output valid g = v il 70 80 100 ns t glqv t oe output enable low to output valid e = v il 40 50 60 ns t ehqz (2) t df chip enable high to output hi-z g = v il 040050060ns t ghqz (2) t df output enable high to output hi-z e = v il 040050060ns t axqx t oh address transition to output transition e = v il , g = v il 000ns
7/15 M27W101 table 9. programming mode dc characteristics (1) (t a = 25 c; v cc = 6.25v 0.25v; v pp = 12.75v 0.25v) note: 1. v cc must be applied simultaneously with or before v pp and removed simultaneously or after v pp . table 10. programming mode ac characteristics (1) (t a = 25 c; v cc = 6.25v 0.25v; v pp = 12.75v 0.25v note: 1. v cc must be applied simultaneously with or before v pp and removed simultaneously or after v pp . 2. sampled only, not 100% tested. symbol parameter test condition min max unit i li input leakage current v il v in v ih 10 a i cc supply current 50 ma i pp program current e = v il 50 ma v il input low voltage C0.3 0.8 v v ih input high voltage 2 v cc + 0.5 v v ol output low voltage i ol = 2.1ma 0.4 v v oh output high voltage ttl i oh = C400a 2.4 v v id a9 voltage 11.5 12.5 v symbol alt parameter test condition min max unit t avpl t as address valid to program low 2 s t qvpl t ds input valid to program low 2 s t vphpl t vps vpp high to program low 2 s t vchpl t vcs vcc high to program low 2 s t elpl t ces chip enable low to program low 2 s t plph t pw program pulse width 95 105 s t phqx t dh program high to input transition 2 s t qxgl t oes input transition to output enable low 2 s t glqv t oe output enable low to output valid 100 ns t ghqz (2) t dfp output enable high to output hi-z 0 130 ns t ghax t ah output enable high to address transition 0ns programming the M27W101 has been designed to be fully com- patible with the m27c1001 and has the same elec- tronic signature. as a result the M27W101 can be programmed as the m27c1001 on the same pro- gramming equipment applying 12.75v on v pp and 6.25v on v cc using the same presto ii algo- rithm. when delivered (and after each 1s erasure for uv eprom), all bits of the M27W101 are in the '1' state. data is introduced by selectively pro- gramming '0's into the desired bit locations. al- though only '0's will be programmed, both '1's and '0's can be present in the data word. the only way to change a 0 to a 1 is by die exposure to ultra- violet light (uv eprom). the M27W101 is in the programming mode when v pp input is at 12.75v, e is at v il and p is pulsed to v il . the data to be programmed is applied to 8 bits in parallel to the data output pins. the levels required for the ad- dress and data inputs are ttl. v cc is specified to be 6.25v 0.25v.
M27W101 8/15 figure 7. programming flowchart ai00715d n = 0 last addr verify p = 100 m s pulse ++n = 25 ++ addr v cc = 6.25v, v pp = 12.75v fail check all bytes 1st: v cc = 5v 2nd: v cc = 2.7v yes no yes no yes no presto ii programming algorithm presto ii programming algorithm allows the whole array to be programmed, with a guaranteed margin, in a typical time of 13 seconds. program- ming with presto ii involves in applying a se- quence of 100s program pulses to each byte until a correct verify occurs (see figure 7). during pro- gramming and verify operation, a margin mode circuit is automatically activated in order to guar- antee that each cell is programmed with enough margin. no overprogram pulse is applied since the verify in margin mode at v cc much higher than 3.6v, provides necessary margin to each pro- grammed cell. program inhibit programming of multiple M27W101s in parallel with different data is also easily accomplished. ex- cept for e , all like inputs including g of the parallel M27W101 may be common. a ttl low level pulse applied to a M27W101's p input, with e low and v pp at 12.75v, will program that M27W101. a high level e input inhibits the other M27W101s from be- ing programmed. program verify a verify (read) should be performed on the pro- grammed bits to determine that they were correct- ly programmed. the verify is accomplished with e and g at v il , p at v ih , v pp at 12.75v and v cc at 6.25v. figure 6. programming and verify modes ac waveforms tavpl valid ai00714 a0-a16 q0-q7 v pp v cc p g data in data out e tqvpl tvphpl tvchpl tphqx tplph tglqv tqxgl telpl tghqz tghax program verify
9/15 M27W101 on-board programming the M27W101 can be directly programmed in the application circuit. see the relevant application note an620. electronic signature the electronic signature (es) mode allows the reading out of a binary code from an eprom that will identify its manufacturer and type. this mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. the es mode is functional in the 25c 5c am- bient temperature range that is required when pro- gramming the M27W101. to activate the es mode, the programming equipment must force 11.5v to 12.5v on address line a9 of the M27W101, with v pp =v cc = 5v. two identifier bytes may then be sequenced from the device out- puts by toggling address line a0 from v il to v ih . all other address lines must be held at v il during electronic signature mode. byte 0 (a0 = v il ) represents the manufacturer code and byte 1 (a0 = v ih ) the device identifier code. for the stmicroelectronics M27W101, these two identifier bytes are given in table 4 and can be read-out on outputs q7 to q0. note that the M27W101 and m27c1001 have the same identifier byte. erasure operation (applies to uv eprom) the erasure characteristics of the M27W101 is such that erasure begins when the cells are ex- posed to light with wavelengths shorter than ap- proximately 4000 ?. it should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 ? range. research shows that constant exposure to room level fluo- rescent lighting could erase a typical M27W101 in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. if the M27W101 is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M27W101 window to prevent unintentional erasure. the recommended erasure procedure for the M27W101 is exposure to short wave ultraviolet light which has a wavelength of 2537 ?. the inte- grated dose (i.e. uv intensity x exposure time) for erasure should be a minimum of 15 w-sec/cm 2 . the erasure time with this dosage is approximate- ly 15 to 20 minutes using an ultraviolet lamp with 12000 w/cm 2 power rating. the M27W101 should be placed within 2.5 cm (1 inch) of the lamp tubes during the erasure. some lamps have a filter on their tubes which should be removed before erasure.
M27W101 10/15 table 11. ordering information scheme note: 1. high speed, see ac characteristics section for further information. 2. this speed also guarantees 70ns access time at v cc = 3.0v to 3.6v. 3. these speeds are replaced by the 100ns. 4. packages option available on request. please contact stmicroelectronics local sales office. for a list of available options (speed, package, etc...) or for further information on any aspect of this de- vice, please contact the stmicroelectronics sales office nearest to you. example: M27W101 -80 k 6 tr device type m27 supply voltage w = 2.7v to 3.6v device function 101 = 1 mbit (128kb x8) speed -80 (1,2) = 80 ns -100 = 100 ns not for new design (3) -120 = 120 ns -150 = 150 ns -200 = 200 ns package f = fdip32w (4) b = pdip32 k = plcc32 n = tsop32: 8 x 20 mm (4) temperature range 6 = C40 to 85 c options tr = tape & reel packing table 12. revision history date revision details july 1999 first issue 04/04/00 fdip32w package dimension, l max added (table 13) tsop32 and plcc32 package dimension changed (table 16 and 15) 0 to 70c temperature range deleted programming time changed
11/15 M27W101 table 13. fdip32w - 32 pin ceramic frit-seal dip with window, package mechanical data symb mm inches typ min max typ min max a 5.72 0.225 a1 0.51 1.40 0.020 0.055 a2 3.91 4.57 0.154 0.180 a3 3.89 4.50 0.153 0.177 b 0.41 0.56 0.016 0.022 b1 1.45 C C 0.057 C C c 0.23 0.30 0.009 0.012 d 41.73 42.04 1.643 1.655 d2 38.10 C C 1.500 C C e 15.24 C C 0.600 C C e1 13.06 13.36 0.514 0.526 e 2.54 C C 0.100 C C ea 14.99 C C 0.590 C C eb 16.18 18.03 0.637 0.710 l 3.18 4.10 0.125 0.161 s 1.52 2.49 0.060 0.098 ? 7.11 C C 0.280 C C a 4 11 4 11 n32 32 figure 8. fdip32w - 32 pin ceramic frit-seal dip with window, package outline drawing is not to scale. fdipw-a a3 a1 a l b1 b e d s e1 e n 1 c a ea d2 ? eb a2
M27W101 12/15 table 14. pdip32 - 32 lead plastic dip, 600 mils width, package mechanical data symb mm inches typ min max typ min max a C 5.08 C 0.200 a1 0.38 C 0.015 C a2 3.56 4.06 0.140 0.160 b 0.38 0.51 0.015 0.020 b1 1.52 C C 0.060 C C c 0.20 0.30 0.008 0.012 d 41.78 42.04 1.645 1.655 d2 38.10 C C 1.500 C C e 15.24 C C 0.600 C C e1 13.59 13.84 0.535 0.545 e1 2.54 C C 0.100 C C ea 15.24 C C 0.600 C C eb 15.24 17.78 0.600 0.700 l 3.18 3.43 0.125 0.135 s 1.78 2.03 0.070 0.080 a 0 10 0 10 n32 32 figure 9. pdip32 - 32 lead plastic dip, 600 mils width, package outline drawing is not to scale. pdip a2 a1 a l b1 b e1 d s e1 e n 1 c a ea eb d2
13/15 M27W101 table 15. plcc32 - 32 lead plastic leaded chip carrier, package mechanical data symb mm inches typ min max typ min max a 2.54 3.56 0.100 0.140 a1 1.52 2.41 0.060 0.095 a2 0.38 C 0.015 C b 0.33 0.53 0.013 0.021 b1 0.66 0.81 0.026 0.032 d 12.32 12.57 0.485 0.495 d1 11.35 11.56 0.447 0.455 d2 9.91 10.92 0.390 0.430 e 14.86 15.11 0.585 0.595 e1 13.89 14.10 0.547 0.555 e2 12.45 13.46 0.490 0.530 e 1.27 C C 0.050 C C f 0.00 0.25 0.000 0.010 r 0.89 C C 0.035 C C n32 32 nd 7 7 ne 9 9 cp 0.10 0.004 figure 10. plcc32 - 32 lead plastic leaded chip carrier, package outline drawing is not to scale. plcc d ne e1 e 1 n d1 nd cp b d2/e2 e b1 a1 a r 0.51 (.020) 1.14 (.045) f a2
M27W101 14/15 table 16. tsop32 - 32 lead plastic thin small outline, 8 x 20 mm, package mechanical data symbol mm inch typ min max typ min max a 1.200 0.0472 a1 0.050 0.150 0.0020 0.0059 a2 0.950 1.050 0.0374 0.0413 b 0.150 0.270 0.0059 0.0106 c 0.100 0.210 0.0039 0.0083 d 19.800 20.200 0.7795 0.7953 d1 18.300 18.500 0.7205 0.7283 e 0.500 C C 0.0197 C C e 7.900 8.100 0.3110 0.3189 l 0.500 0.700 0.0197 0.0276 a 0 5 0 5 cp 0.100 0.0039 n32 32 figure 11. tsop32 - 32 lead plastic thin small outline, 8 x 20 mm, package outline drawing is not to scale. tsop-a d1 e 1 n cp b e a2 a n/2 d die c l a1 a
15/15 M27W101 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2000 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com

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